power transistors 1 publication date: may 2003 sjd00244bed 2SD2133 silicon npn epitaxial planar type for low-frequency power amplification driver features ? low collector-emitter saturation voltage v ce(sat) absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c 3 c unit: mm parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 10 a, i e = 0 60 v collector-emitter voltage (base open) v ceo i c = 2 ma, i b = 0 50 v emitter-base voltage (collector open) v ebo i e = 10 a, i c = 0 5 v collector-base cutoff current (emitter open) i cbo v cb = 20 v, i e = 0 0.1 a forward current transfer ratio h fe1 * 1, 2 v ce = 10 v, i c = 0.5 a 85 340 ? h fe2 * 1 v ce = 5 v, i c = 1 a 50 100 h fe3 v ce = 10 v, i c = 1 ma 35 collector-emitter saturation voltage v ce(sat) i c = 500 ma, i b = 50 ma 0.2 0.4 v base-emitter saturation voltage v be(sat) i c = 500 ma, i b = 50 ma 0.85 1.20 v transition frequency f t v cb = 10 v, i e = ? 50 ma, f = 200 mhz 200 mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz 11 pf (common base, input open circuited) parameter symbol rating unit collector-base voltage (emitter open) v cbo 60 v collector-emitter voltage (base open) v ceo 50 v emitter-base voltage (collector open) v ebo 5v collector current i c 1a peak collector current i cp 1.5 a collector power dissipation p c 1.5 w junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * 1: pulse measurement * 2: rank classification rank q r s h fe1 85 to 170 120 to 240 170 to 340 7.5 0.2 0.65 0.1 0.7 0.1 1.15 0.2 2.5 0.2 2.5 0.2 0.85 0.1 1.0 0.1 0.7 0.1 1.15 0.2 0.5 0.1 1 0.8 c 23 0.4 0.1 4.5 0.2 0.8 c 0.8 c 3.8 0.2 16.0 1.0 10.8 0.2 2.05 0.2 90? 2.5 0.1 1: emitter 2: collector 3: base mt-3-a1 package
2SD2133 2 sjd00244bed v ce(sat) ? i c v be(sat) ? i c h fe ? i c p c ? t a i c ? v ce i c ? i b f t ? i e c ob ? v cb v cer ? r be 0 160 40 120 80 0 0.4 0.8 1.2 1.6 2.0 collector power dissipation p c (w) ambient temperature t a ( c) without heat sink 012 210 48 6 0 1.2 1.0 0.8 0.6 0.4 0.2 collector current i c (a) collector-emitter voltage v ce (v) i b =10ma 9ma 8ma 7ma 6ma 5ma 4ma 3ma 2ma 1ma ta=25?c 0 1.2 1.0 0.8 0.6 0.4 0.2 012 210 48 6 base current i b (ma) collector current i c (a) v ce =10v ta=25?c 10 ? 3 1 10 ? 2 10 ? 1 1 10 10 100 1 000 collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) i c /i b =10 ta=?25?c ta=25?c ta=75?c 0.01 1 0.1 1 10 100 10 100 1 000 base-emitter saturation voltage v be(sat) (v) collector current i c (ma) i c /i b =10 ta=75?c ta=?5?c ta=25?c 0 1 300 250 200 150 100 50 10 100 1 000 forward current transfer ratio h fe collector current i c (ma) v ce =10v ta=75?c ta=25?c ta=?5?c ? 1 ? 10 ? 100 0 40 80 120 200 160 transition frequency f t (mhz) emitter current i e (a) v cb =10v f=200mhz t c =25?c 0 1 30 25 20 15 10 5 10 100 collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) i e =0 f=1mhz ta=25?c 0.1 1 10 100 0 20 40 60 80 100 base-emitter resistance r be (k ? ) collector-emitter voltage (resistor between b and e) v cer (v) i c =10ma t c =25?c
2SD2133 3 sjd00244bed r th ? t 10 ? 1 1 10 10 4 10 2 10 3 10 3 10 4 10 2 10 1 10 ? 1 10 ? 3 10 ? 2 10 ? 4 time t (s) thermal resistance r th ( c/w) without heat sink i cbo ? t a safe operation area 1 10 10 2 10 3 10 4 0160 40 120 80 i cbo ( t a ) i cbo ( t a = 25 c ) v ce =10v ambient temperature t a ( c) 10 ? 3 0.1 10 ? 2 10 ? 1 1 10 1 10 100 collector current i c (a) collector-emitter voltage v ce (v) i cp i c dc t=10ms single pulse t c =25?c
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